Semiconductor memory device with signal aligning circuit

ABSTRACT

A signal aligning circuit includes a plurality of pads receiving input signals in parallel 1 bit by 1 bit; a first transferring unit for transferring the input signals as first signals in synchronization with a first clock signal of an internal clock, and transferring the input signals as second signals in synchronization with a second clock signal of the internal clock; a second transferring unit for transferring the first signals in synchronization with the second clock signal of the internal clock; and an aligning unit for aligning the first and second signals transferred from the first and second transferring units and outputting the aligned signal as output signals.

This application is a division of U.S. patent application Ser. No.11/478,092 filed on Jun. 30, 2006 now U.S. Pat. No. 7,804,723, whichclaims priority of Korean patent application number 10-2005-0090855filed on Sep. 28, 2005 and Korean patent application number10-2006-0033765 filed on Apr. 13, 2006. The disclosure of each of theforegoing applications is incorporated herein by reference in itsentirety.

FIELD OF THE INVENTION

The present invention relates to a semiconductor memory device, and moreparticularly to a signal aligning circuit for aligning input signalswhen the number of input pads or pins is smaller than the number ofexternal input signals.

DESCRIPTION OF RELATED ARTS

Generally, most memory devices including random access memory (RAM) havea single port with a plurality of input/output pin sets. That is, asingle port is provided for data exchange between a memory device and anexternal chipset. Such a memory device having a single port uses aparallel input/output interface to simultaneously transmit multi-bitdata through a signal line connected to a plurality of input/output(I/O) pins. The memory device exchanges data with the external devicethrough a plurality of I/O pins in parallel.

The I/O interface is an electrical and mechanical scheme to connect unitdevices having different functions through signal lines and transmittransmission/reception data precisely. An I/O interface, describedbelow, must have the same precision. The signal line is a bus fortransmitting an address signal, a data signal, and a control signal. Asignal line, described below, will be referred to as a bus.

A parallel I/O interface has high data processing efficiency (speed)because it can simultaneously transmit multi-bit data through aplurality of buses. Therefore, the parallel I/O interface is widely usedin a short distance transmission that requires a high speed. In theparallel I/O interface, however, the number of buses for transmittingI/O data increases. Consequently, as distance increases, themanufacturing cost increases. Due to the limitation of a single port, aplurality of memory devices are independently configured so as tosupport various multi-media functions in terms of hardware of amulti-media system. While an operation for a certain function is carriedout, an operation for another function cannot be concurrently carriedout.

Considering the disadvantage of the parallel I/O interface, manyattempts to change the parallel I/O interface into serial I/O interfacehave been made. Also, considering compatible expansion with deviceshaving other serial I/O interfaces, the change to serial I/O interfacein I/O environment of the semiconductor memory device is required.Moreover, appliance devices for audio and video are embedded intodisplay devices, such as high definition television (HDTV) and liquidcrystal display (LCD) TV. Because these appliance devices requireindependent data processing, there is a demand for multi-port memorydevices having a serial I/O interface using a plurality of ports.

A conventional multi-port memory device having a serial I/O interfaceincludes a processor for processing serial I/O signals, and a DRAM corefor performing a parallel low-speed operation. The processor and theDRAM core are implemented on the same wafer, that is, a single chip.

FIG. 1 is a block diagram of a conventional multi-port memory devicehaving a serial I/O interface. For convenience of explanation, themulti-port memory device having four ports PORT0-PORT3 and eight banksBANK0-BANK7 is illustrated. Each of the banks has a 16K (row)×4K(column) memory cell array.

The multi-port memory device having the serial I/O interface includesserial I/O pads TX+, TX−, RX+ and RX−, ports PORT0 to PORT3, banks BANK0to BANK7, and global data buses.

Such a multi-port memory device has to be configured such that signals(hereinafter, referred to as “input valid data signals”) input throughthe ports PORT0 to PORT3 can all be input to all banks BANK0 to BANK7,and signals (hereinafter, referred to as “output valid data signals”)output from the banks BANK0 to BANK7 can be selectively transferred toall ports PORT0 to PORT3.

For this purpose, the ports PORT0 to PORT3 and the banks BANK0 to BANK7are connected together through the global data buses. The global databuses include input buses GIO_IN for transferring the input valid datasignals from the ports PORT0 to PORT3 to the banks BANK0 to BANK7, andoutput buses GIO_OUT for transferring the output valid data signals tothe ports PORT0 to PORT3.

The global data buses are divided into the input buses GIO_IN and theoutput buses GIO_OUT. The input buses GIO_IN transfer the parallel inputvalid data signals from the ports PORT0 to PORT3 to the banks BANK0 toBANK7. The output buses GIO_OUT transfer the parallel input valid datasignals from the banks BANK0 to BANK7 to the ports PORT0 to PORT3.

The input valid data signals from the ports PORT0 to PORT3 containinformation in a bank selection signal for selecting the banks BANK0 toBANK7. Therefore, signals indicating which ports the signals access andwhich banks access through the ports are input to the banks BANK0 toBANK7. Accordingly, the port information is selectively transferred tothe banks and the bank information is transferred to the global databuses designated to the ports.

The ports PORT0 to PORT3 include a serializer & deserializer (SERDES)that converts the signals input through the reception pads RX+ and RX−into the parallel input valid data signals as a low speed datacommunication scheme, and transfers them through the input buses GIO_INto the DRAM core of the banks BANK0 to BANK7, and also converts theparallel output valid data signals, which are output from the DRAM coreof the banks BANK0 to BANK7 through the output buses GIO_OUT, into theserial signals as a high speed data communication scheme, and outputsthem through the transmission pads TX+ and TX−.

FIG. 2 is a block diagram of the ports PORT0 to PORT3 illustrated inFIG. 1.

The ports PORT0 to PORT3 perform data communication with an externaldevice in a serial I/O interface through the serial I/O pads TX+, TX−,RX+ and RX−. The signals input through the reception pads RX+ and RX−are serial high-speed input signals, and the signals output through thetransmission pads TX+ and TX− are serial high-speed output signals.Generally, the high-speed I/O signals include differential signals forrecognizing the high-speed I/O signals smoothly. The differential I/Osignals are distinguished by indicating the serial I/O pads TX+, TX−,RX+ and RX− with “+” and “−”.

The ports PORT0 to PORT3 include a serializer & deserializer (SERDES) 20and a logic unit 30. The SERDES 20 includes a driver 21, a serializer22, an input latch 23, a clock generator 24, an input buffer 25, adeserializer 26, and a data output unit 27.

The driver 21 outputs the output valid data signals serialized by theserializer 22 to an external device through the transmission pads TX+and TX− in a differential type.

The serializer 22 serializes the parallel output valid data signalsinput from the input latch 23 in synchronization with an internal clockgenerated from the clock generator 24, and outputs the serial outputvalid data signals to the driver 21.

The input latch 23 latches the output valid data signals output throughthe output buses GIO_OUT in synchronization with the internal clock andtransfers the latched signals to the serializer 22.

The input buffer 25 buffers an external signal input from the externaldevice through the reception pads RX+ and RX− in synchronization withthe internal clock and transfers the buffered signal to the deserializer26.

The deserializer 26 deserializes the external signal input from theinput buffer 25 in synchronization with the internal clock and outputsthe parallel input valid data signals to the data output unit 27.

The data output unit 27 transfers the input valid data signals from thedeserializer 26 through the input buses GIO_IN.

The clock generator 24 receives a reference clock RCLK from externaldevice to generate the internal clock. The internal clock has period andphase equal to those of the reference clock RCLK, or period and/or phasedifferent from those of the reference clock RCLK. Also, the clockgenerator 24 can generate one internal clock using the reference clockRCLK or can generate at least two internal clocks having differentperiods and phase.

An operation characteristic of the ports PORT0 to PORT3 will bedescribed below in detail.

First, the process of transferring the external signal via the inputbuses GIO_IN will be described. The external signal is input from theexternal device through the reception pads RX+ and RX− in a frame format high speed.

The external signal is sampled through the input buffer 25 synchronizedwith the internal clock output from the clock generator 24. The inputbuffer 25 transfers the buffered external signal to the deserializer 26.The deserializer 26 deserializes the external signal input from theinput buffer 25 in synchronization with the internal clock, and outputsthe parallel input valid data signal to the data output unit 27. Thedata output unit 27 transfers the parallel input valid data signal fromthe deserializer 26 through the input bus GIO_IN.

Next, the process of converting the parallel output valid data signalsoutput through the output bus GIO_OUT into the serial signals andtransferring them to the external device through the transmission padsTX+ and TX− will be described below.

The parallel output valid data signals are transferred to the inputlatch 23 through the output buses GIO_OUT. The input latch 23 latchesthe output valid data signals output through the output buses GIO_OUT insynchronization with the internal clock and transfers the latchedsignals to the serializer 22. Like the input latch 23, the serializer 22serializes the output valid data signals transferred from the inputlatch 23 in synchronization with the internal clock and transfers theserial signals to the driver 21. The driver 21 receives the serialsignals from the serializer 22 and outputs them to the external devicethrough the transmission pads TX+ and TX−.

The logic unit 30 receives the parallel signals input through thereception pads RX+ and RX− and deserialized by the SERDES 20 and decodesthe parallel signals according to a predetermined specification togenerate row/column addresses and commands. DRAM cells are accessedaccording to the addresses and commands from the LOGIC UNIT 30, and dataread/write operations are then carried out.

Since the above-described multi-port memory device is configured toperform the data communication with the external device in thehigh-speed serial I/O interface, it must transmit data at a higher speedcompared with the existing typical DRAMs. Accordingly, a conventionaltest device for testing the typical DRAM device is limited intransferring and recognizing high-speed data signals.

Generally, the DRAM has a predetermined number of address pins, which isdetermined by a larger one of the number of row addresses and the numberof column addresses. Also, the DRAM has a plurality of command pins anda plurality of test data I/O pins (hereinafter, referred to as DQ pins).In testing a DRAM core, commands are input from the test devicesupporting the parallel I/O interface through the command pins, and celladdresses to be accessed are simultaneously input through the addresspins. Then, the DRAM core is tested by analyzing the data output throughthe DQ pins.

For this reason, when the DRAM core of the multi-port memory device istested using the test device supporting the conventional parallel I/Ointerface, the I/O pads TX+, TX−, RX+ and RX− supporting the high-speedserial data communication have to be switched into the parallel I/Opads. The I/O pads TX+, TX−, RX+ and RX− are physically divided into thetransmission pads TX+ and TX− and the reception pads RX+ and RX− by theports PORT0 to PORT3. That is, the transmission function and thereception function are separated from each other because the outputdriver and the input buffer are separately connected to the transmissionpads and the reception pads. Therefore, the use of the transmission padsTX+ and TX− as the input pads means a change of the internal structureof the ports PORT0 to PORT3. Therefore, the circuit configurationbecomes complicated. A method of using the reception pads RX+ and RX− asthe input pads during test can be proposed.

However, this method is not matched with the increase in the size of thebanks. Specifically, since the multi-port memory device of FIG. 1includes banks BANK0 to BANK7 each having 16K (row)×4K (column) memorycell arrays, 14 (14-bit) row addresses and 6 (6-bit) column addressesare required to access a specific cell. Also, 3 (3-bit) bank addressesare further required to access eight banks BANK0 to BANK7. Consequently,at least 17-bit signals have to be input from the test device. However,since two reception pads RX+ and RX− are provided at each port PORT0 toPORT3, the total number of reception pads is only eight (8 bits).Therefore, in order to use the existing DRAM test method in the DRAMdevice of FIG. 1, pads (pins) that can apply commands and addresses haveto be further provided.

In this case, since the number of kinds of command signals is small, theabove-described problem can be solved by adding additional pads.However, since the number of the pads for receiving the address signalsis large, a large number of pads are required. Therefore, a gap betweenadjacent pads becomes narrow. Also, additional circuits such asElectrostatic Discharge (ESD) for preventing electrostatic electricitycaused by interference between pads have to be added, thus degradingarea efficiency.

SUMMARY OF THE INVENTION

It is, therefore, an object of the present invention to provide a signalaligning circuit that can be stably tested without adding I/O pads evenwhen the number of data I/O pads is smaller than the number of addressesfor accessing the memory cell.

It is another object of the present invention to provide a semiconductormemory device that can be stably tested without adding I/O pads evenwhen the number of data I/O pads is smaller than the number of addressesfor accessing the memory cell.

It is a further object of the preset invention to provide asemiconductor memory device that can perform a test stably withoutadding I/O pads in testing the DRAM core of the multi-port memorydevice, which performs the data communication with an external device inserial I/O interface, by using a test device supporting the parallel I/Ointerface, even when the number of data I/O pads is smaller than thenumber of addresses for accessing the memory cell.

In accordance with an aspect of the present invention, there is provideda signal aligning circuit including: a plurality of pads receiving inputsignals in parallel 1 bit by 1 bit; a first transferring unit fortransferring the input signals as first signals in synchronization witha first clock of an internal clock, and transferring the input signalsas second signals in synchronization with a second clock of the internalclock; a second transferring unit for transferring the first signals insynchronization with the second clock of the internal clock; and analigning unit for aligning the first and second signals transferred fromthe first and second transferring units and outputting the alignedsignal as output signals.

In accordance with another aspect of the present invention, there isprovided a semiconductor memory device having a memory cell array andperforming a test operation by using first signals input through aplurality of pads in parallel 1 bit by 1 bit in a test mode, thesemiconductor memory device including: a signal aligning circuit forsequentially storing and aligning bits of the first signals, the numberof which corresponds to the number of pads, generating second signals,the number of which is n times the number of the pads (where n isintegers equal to or greater than 2), and outputting the second signalsto the memory cell array.

In accordance with further another aspect of the present invention,there is provided a semiconductor memory device having a plurality oftransmission/reception pads, a plurality of ports performing a serialdata communication with an external device through thetransmission/reception pads, a plurality of banks performing a paralleldata communication with the ports, and a plurality of global data busesproviding a data communication between the banks and the ports, thesemiconductor memory device including: a signal aligning circuit forsequentially storing and aligning bits of the first signals from thereception pads in parallel 1 bit by 1 bit in a test mode of the bank,the bit number of the first signals corresponding to the number of pads,generating second signals the bit number of which is n times the numberof the reception pads (where n is integers equal to or greater than 2),and outputting the second signals to the banks through the global databuses.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention willbecome apparent from the following description of the preferredembodiments given in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a block diagram of a conventional multi-port memory device;

FIG. 2 is a block diagram of a PORT illustrated in FIG. 1;

FIG. 3 is a block diagram of a signal aligning circuit in accordancewith a first embodiment of the present invention;

FIG. 4 is a circuit diagram of a first shift register illustrated inFIG. 3;

FIG. 5 is a circuit diagram of a second shift register illustrated inFIG. 3;

FIG. 6 is a circuit diagram of an aligner illustrated in FIG. 3;

FIG. 7 is a circuit diagram of an initialization signal generator forgenerating an initialization signal illustrated in FIG. 3;

FIG. 8 is a circuit diagram of a synchronization signal generator forgenerating a synchronization signal illustrated in FIG. 3;

FIG. 9 is a circuit diagram of an internal clock generator forgenerating an internal clock illustrated in FIG. 3;

FIG. 10 is a waveform diagram for explaining an operation characteristicof the signal aligning circuit of FIG. 3; and

FIG. 11 is block diagram of a multi-port memory device in accordancewith a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, a signal aligning circuit and a semiconductor device withthe same in accordance with exemplary embodiments of the presentinvention will be described in detail with reference to the accompanyingdrawings.

FIG. 3 is a block diagram of a signal aligning circuit 100 in accordancewith a first embodiment of the present invention. Specifically, FIG. 3illustrates an address aligning circuit 100 that receives 8 bits througheight reception pads at a time.

The signal aligning circuit 100 includes a first shift register 110, asecond shift register 120, and an aligner 130.

The first and second shift registers 110 and 120 receive externaladdress signals A_EXT<0:7> input from a plurality of pads P0 to P7 inparallel 1 bit by 1 bit, and sequentially store bits, the number ofwhich corresponds to that of the pads P0 to P7. The aligner 130 alignsinternal address signals A_IN<0:7> and A_IN<8:15> transferred from thefirst and second shift registers 110 and 120, and generates addresssignals A<0:15> whose bit number is two times that of the pads P0 to P7.

FIG. 4 is a circuit diagram of the first shift register 110 illustratedin FIG. 3.

The first shift register 110 receives the external address signalsA_EXT<0:7> input through the pads P0 to P7 in parallel 1 bit by 1 bit,and transfers them to the second shift register 120 in synchronizationwith rising edges of a first clock CLK0 of the internal clock ICLK.Then, the first shift register 110 receives next 8-bit external addresssignals A_EXT<0:7>, and transfers them to the aligner 130 insynchronization with rising edges of a second clock CLK1 of the internalclock CLK.

For this operation, as illustrated in FIG. 4, the first shift register110 includes eight D flip-flops D-FF0 to D-FF7 corresponding to thenumber of the external address signals A_EXT<0:7>. Each of the Dflip-flops D-FF0 to D-FF7 receives a corresponding one of the externaladdress signals 1 bit by 1 bit and outputs them to the second shiftregister 120 and the aligner 130 at every rising edge of the internalclock ICLK. Each of the D flip-flops D-FF0 to D-FF7 is reset in responseto an initialization signal RESETB.

FIG. 5 is a circuit diagram of the second shift register 120 illustratedin FIG. 3.

The second shift register 120 receives internal address signalsA_IN<0:7> transferred 1 bit by 1 bit from the D flip-flops D-FF0 toD-FF7 of the first shift register 110, and outputs them to the aligner130 in synchronization with the rising edges of the second clock CLK1 ofthe internal clock ICLK.

For this operation, as illustrated in FIG. 5, the second shift register120 includes eight D flip-flops D-FF8 to D-FF15. Each of the Dflip-flops D-FF8 to D-FF15 receives the internal address signalsA_IN<0:7> from the first shift register 110 1 bit by 1 bit and outputsthem to the aligner 130 in synchronization with the rising edge of thesecond clock CLK1 of the internal clock ICLK. Each of the D flip-flopsD-FF8 to D-FF15 is reset in response to an initialization signal RESETB.

FIG. 6 is a circuit diagram of the aligner 130 illustrated in FIG. 3.

The aligner 130 aligns the internal address signals A_IN<0:7> andA_IN<8:15> transferred 8 bits by 8 bits from the first and second shiftregisters 110 and 120 after a predetermined time Δt1+Δt3 from the risingedge of the second clock CLK1 of the internal clock ICLK, and generates16-bit final address signals A<0:15>.

For this operation, as illustrated in FIG. 6, the ALIGNER 130 includesinverters INV1 to INV16 and a plurality of transfer gates TG1 to TG16.

Referring to FIG. 6, the aligner 130 aligns the internal address signalsA_IN<0:7> and A_IN<8:15> input from the first and second shift registers110 and 120 8 bits by 8 bits in response to a synchronization signalLATENP activated to a logic high level after the predetermined timeΔt1+Δt3 from the rising edge of the second clock CLK1 of the internalclock ICLK, and outputs 16-bit final address signals A<0:15>.

The signal aligning circuit in accordance with the first embodiment ofthe present invention further includes an initialization signalgenerator for initializing the first and second shift registers 110 and120 to a logic low level.

FIG. 7 is a circuit diagram of the initialization signal generator 140for generating the initialization signal RESETB illustrated in FIG. 3.

The initialization signal generator 140 includes first and second Dflip-flops D-FF16 and D-FF17, first and second delay units 71 and 72,and an inverter INV17.

The first D flip-flop D-FF16 receives a power supply voltage VDD inputthrough an input terminal D and outputs the received signal as a firstoutput signal Q1 to the second D flip-flop D-FF17 in synchronizationwith the rising edge of the first clock CLK0 of the internal clock ICLK.The second D flip-flop D-FF17 receives the first output signal Q1 andoutputs the received signal as a second output signal Q2 to the firstdelay unit 71 in synchronization with the rising edge of the secondclock CLK1 of the internal clock ICLK.

The first delay unit 71 generates a delay signal LATEN by delaying thesecond output signal Q2 by AΔt1 from the rising edge of the second clockCLK1 of the internal clock ICLK. The second delay unit 72 delays thedelay signal LATEN by Δt2.

The delay value Δt1+Δt2 delayed by the first and second delay units 71and 72 has to be greater than the time that is necessary for the aligner130 to align the internal address signals A_IN<0:7> and A_IN<8:15> input8 bits by 8 bits and then generate 16-bit address signals A<0:15>. Thatis, the delay value Δt1+Δt2 has to be greater than the time that isnecessary for the aligner 130 to generate the 16-bit address signalsA<0:15> from the rising edge of the second clock CLK1 of the internalclock ICLK. The reason for this is that the aligner 130 may not beinitialized while generating the 16-bit address signals A<0:15> and thefirst and second shift registers 110 and 120 must maintain the internaladdress signals A_IN<0:7> and A_IN<8:15>.

The inverter INV17 outputs the initialization signal RESETB by invertingthe phase of the output signal of the second DELAY UNIT 72.

Meanwhile, the signal aligning circuit further includes asynchronization signal generator for generating the synchronizationsignal LATENP to synchronize the aligner 130.

FIG. 8 is a circuit diagram of a synchronization signal generator 150for generating the synchronization signal LATENP illustrated in FIG. 3.

The synchronization signal generator 150 includes a third delay unit 91and an AND gate AND1.

The third delay unit 91 includes an inverter chain with a plurality ofinverters connected in a chain form. It delays the delay signal LATEN byΔt3. At this point, the delay value Δt3 of the third delay unit 91 hasto be less than the delay value Δt2 of the second delay unit 72. Thereason for this is that the aligner 130 may not be initialized whilegenerating the 16-bit address signals A<0:15> and the first and secondshift registers 110 and 120 must maintain the internal address signalsA_IN<0:7> and A_IN<8:15>. Consequently, the delay value Δt1+Δt2 is atime that is taken until the aligner 130 generates all of the 16-bitaddress signals A<0:15> from the rising edge of the second clock CLK1 ofthe internal clock ICLK.

FIG. 9 is a circuit diagram of an internal clock generator 160 forgenerating the internal clock ICLK illustrated in FIG. 3.

The internal clock generator 160 includes a pull-up transistor MP, apull-down transistor MN, a latch LAT, and an AND gate AND2.

The pull-up transistor MP is configured with a PMOS transistor. Thepull-up transistor MP is turned on in response to the initializationsignal RESETB and transfers the power supply voltage VDD to an inputterminal of the latch LAT. The pull-down transistor MN is configuredwith an NMOS transistor. The pull-down transistor MN is turned on inresponse to an activation signal T_ACT, e.g., a signal used as a testactivation signal to enter a test mode, and sets the input terminal ofthe latch LAT to a ground voltage VSS.

The latch LAT latches the power supply voltage VDD or the ground voltageVSS according to the operation states of the pull-up transistor MP andthe pull-down transistor MN. For example, if the pull-up transistor MPis turned on and the pull-down transistor MN is turned off, the latchLAT latches the power supply voltage VDD. On the contrary, if thepull-up transistor MP is turned off and the pull-down transistor MN isturned on, the latch LAT latches the ground voltage VSS. In order forthe first and second shift registers 110 and 120 to transfer theexternal address signals A_EXT<0:7>, the ground voltage VSS has to beinput to the input terminal of the latch LAT. Accordingly, the latch LAToutputs a logic high level.

The AND gate AND2 generates the internal clock ICLK by performing an ANDoperation of the output of the latch LAT and a synchronization clockCLKP. The synchronization signal CLKP is synchronized with a rising edgeof an external clock and has a waveform with a predetermined width fromthe rising edge of the external clock. For example, when the output ofthe latch LAT is in logic high state, the internal clock ICLK has thesame period and phase as those of the synchronization clock CLKP.

FIG. 10 is a waveform diagram for explaining an operation characteristicof the signal aligning circuit of FIG. 3.

Hereinafter, referring to FIGS. 3 to 10, the operation characteristicsof the signal aligning circuit in accordance with the first embodimentof the present invention will be described below.

Referring to FIGS. 3 to 10, the first shift register 110 transfers 8-bitexternal address signals A_EXT<0:7> to the second shift register 120 insynchronization with the rising edge of the first clock CLK0 of theinternal clock ICLK. The 8-bit external signals A_EXT<0:7> are inputfrom the eight pads P0 to P7 in parallel 1 bit by 1 bit. That is, at aninitial operation, the 8-bit external address signals A_EXT<0:7> arestored.

Then, the second shift register 120 transfers the 8-bit internal addresssignals A_IN<0:7> to the aligner 130 in synchronization with the risingedge of the second clock CLK1 of the internal clock ICLK. The 8-bitinternal address signals A_IN<0:7> are input from the first shiftregister 110.

At this point, the first shift register 110 receives 8-bit or otherexternal address signals A_EXT<0:7> input through the eight pads P0 toP7 in parallel 1 bit by 1 bit, and outputs the 8-bit internal addresssignals A_IN<8:15>. That is, the first shift register 110 receives newexternal address signals and updates them as new internal addresssignals in synchronization with the rising edge of the second clock CLK1of the internal clock ICLK. The second shift register 120 stores theinternal address signals transferred from the first shift register 110.

Meanwhile, the first D flip-flop D-FF16 of the initialization signalgenerator 140 illustrated in FIG. 7 receives the power supply voltageVDD to output the first output signal Q1 of a logic high state insynchronization with the rising edge of the first clock CLK0 of theinternal clock ICLK. The second D flip-flop D-FF17 of the initializationsignal generator 140 receives the first output signal Q1 to output thesecond output signal Q2 of a logic high state in synchronization withthe rising edge of the second clock CLK1 of the internal clock ICLK. Thefirst delay unit 71 outputs the delay signal LATEN by delaying thesecond output signal Q2 by AΔt1. The second delay unit 72 delays thedelay signal LATEN by Δt2. The delay signal LATEN that is furtherdelayed by Δt2 by the second delay unit 72 is output as theinitialization signal RESETB whose phase is inverted by the inverterINV17.

The internal address signals A_IN<0:7> and A_IN<8:15> output from thefirst and second shift registers 120 and 130 in synchronization with therising edge of the second clock CLK1 of the internal clock ICLK aretransferred to the aligner 130. The aligner 130 is operated in responseto the synchronization signal LATENP that is produced by delaying thedelay signal LATEN by Δt3 through the third delay unit 91. Consequently,the aligner 130 is operated after Δt1+Δt3 from the rising edge of thesecond clock CLK1 of the internal clock ICLK, and aligns the internaladdress signals A_IN<0:7> and A_IN<8:15> to output 16-bit addresssignals A<0:15>.

Meanwhile, the initialization signal RESETB is delayed by Δt1+Δt2 fromthe rising edge of the second clock CLK1 of the internal clock ICLK andthen changed into a logic low state by the inverter INV17. Then, theinitialization signal RESETB is input to a reset terminals of all of theD flip-flops included in the first and second shift registers 110 and120 and the initialization signal generator 140, so that each Dflip-flop is initialized to a logic low state. At this point, since Δt2is greater than Δt3, it is possible to secure the time necessary tooutput the internal address signals A_IN<0:7> and A_IN<8:15> as 16-bitaddress signals A<0:15> before the D flip-flops of the first and secondshift registers 110 and 120 and the initialization signal generator 140are initialized.

An address aligning method of the multi-port memory device using thesignal aligning circuit in accordance with the first embodiment of thepresent invention will be described below.

FIG. 11 is a block diagram of a multi-port memory device in accordancewith a second embodiment of the present invention. For convenience ofexplanation, the multi-port memory device having four ports PORT0-PORT3and eight banks BANK0-BANK7 is illustrated. Each of the banks has a 16K(row)×4K (column) memory cell array. Also, the multi-port memory devicehas eight reception pads RX+ and RX−.

Since the multi-port memory device of FIG. 11 requires 6-bit columnaddresses so as to access the banks BANK0 to BANK7, the column addressescan be input through the eight reception pads RX+ and RX−. However,since the multi-port memory device requires 14-bit row addresses, it isimpossible to receive all the row addresses through the eight receptionpads RX+ and RX−. Also, 3-bit bank addresses are required to access theeight banks BANK0 to BANK7. Consequently, 17 bits including the rowaddresses and the bank addresses are required.

Therefore, the multi-port memory device in accordance with the secondembodiment of the present invention receives 16-bit address signalsthrough the eight reception pads RX+ and RX− during two clocks by usingthe signal aligner 51, and receives the remaining 1 bit through aseparate dummy pad (not shown). For convenience, 1 bit input to thedummy pad will be omitted.

First, the ports PORT0 to PORT3 are designed such that they aredeactivated by the activation signal T_ACT activated to a logic highstate in a test mode and thus does not receive the external addresssignals A_EXT<0:7> input through the reception pads RX+ and RX−.Instead, the external address signals A_EXT<0:7> are bypassed to theSIGNAL ALIGNER 51. An external test device supplies 16-bit externaladdress signals through the reception pads RX+ and RX− during two clocks8 bits by 8 bits.

The signal aligner 51 has the same configuration as the signal aligningcircuit described in the first embodiment of the present invention. Thesignal aligner 51 receives the external address signals A_EXT<0:7> input8 bits by 8 bits through the reception pads RX+ and RX− at every risingedge of the internal clock during two clocks, aligns the 16-bit externaladdress signals, and transfer the 16-bit final address signals A<0:15>through the global data buses GIO_IN.

Although the multi-port memory device has been described in the secondembodiment of the present invention, the present invention can also beapplied to semiconductor memory devices such as DRAM. That is, thepresent invention can be applied to all semiconductor memory devices inwhich the number of the reception pads is smaller than the number ofbits of the address signals.

In accordance with the present invention, the semiconductor memorydevice can be stably tested without adding I/O pads even when the numberof data I/O pads is smaller than the number of addresses for accessingthe memory cell.

Also, in testing the DRAM core of the multi-port memory device using thetest device supporting the parallel I/O interface, the test can bestably performed without adding I/O pads even when the number of dataI/O pads is smaller than the number of addresses for accessing thememory cell.

The present application contains subject matter related to Korean patentapplication Nos. 2005-90855 and 2006-33765, filed in the KoreanIntellectual Property Office on Sep. 28, 2005 and Apr. 13, 2006,respectively, the entire contents of which are incorporated herein byreference.

While the present invention has been described with respect to certainpreferred embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

1. A semiconductor memory device having a memory cell array andperforming a test operation by using first signals input through aplurality of pads in parallel 1 bit by 1 bit in a test mode, thesemiconductor memory device comprising: a signal aligning circuit forsequentially storing and aligning bits of the first signals the numberof which corresponds to the number of pads, generating second signalsthe number of which is n times the number of the pads (where n is aninteger equal to or greater than 2), and outputting the second signalsto the memory cell array, wherein the first signals are address signalsof the memory cell array.
 2. The semiconductor memory device as recitedin claim 1, wherein the signal aligning circuit includes: first andsecond storage units for receiving the first signals and sequentiallystoring bits, the number of which corresponds to the number of the pads;and an aligning unit for aligning the first signals transferred from thefirst and second storage units and generating the second signals.
 3. Thesemiconductor memory device as recited in claim 2, wherein the first andsecond storage units store the first signals in synchronization with aninternal clock.
 4. The semiconductor memory device as recited in claim2, wherein the first storage unit stores the first signals insynchronization with a first clock signal of the internal clock.
 5. Thesemiconductor memory device as recited in claim 4, wherein the firststorage unit stores the first signals in synchronization with a risingedge of the first clock signal of the internal clock.
 6. Thesemiconductor memory device as recited in claim 4, wherein the secondstorage unit stores the first signals transferred from the first storageunit in synchronization with a second clock signal of the internalclock.
 7. The semiconductor memory device as recited in claim 6, whereinthe second storage unit stores the first signals transferred from thefirst storage unit in synchronization with a rising edge of the secondclock signal of the internal clock.
 8. The semiconductor memory deviceas recited in claim 6, wherein the first and second storage unitsinclude shift registers.
 9. The semiconductor memory device as recitedin claim 8, wherein the shift registers each include a plurality of Dflip-flops the number of which corresponds to the number of the pads.10. The semiconductor memory device as recited in claim 9, wherein the Dflip-flop transfers the first signals 1 bit by 1 bit in synchronizationwith the internal clock.
 11. The semiconductor memory device as recitedin claim 8, wherein the aligning unit receives the first signalstransferred from the first and second storage units, and outputs thesecond signals by delaying the received signals by a first delay valuefrom the rising edge of the second clock of the internal clock.
 12. Thesemiconductor memory device as recited in claim 11, wherein the aligningunit includes a plurality of transfer gates.
 13. The semiconductormemory device as recited in claim 11, further comprising aninitialization signal generator for initializing the shift registersafter delaying as much as a second delay value greater than the firstdelay value from the rising edge of the second clock signal of theinternal clock.
 14. The semiconductor memory device as recited in claim13, wherein the initialization signal generator includes: a first Dflip-flop for transferring a power supply voltage in synchronizationwith the rising edge of the first clock signal of the internal clock; asecond D flip-flop for transferring an output of the first D flip-flopin synchronization with the rising edge of the second clock signal ofthe internal clock; a first delay unit for delaying an output of thesecond D flip-flop by a third delay value less than the first delayvalue; a second delay unit for delaying an output of the first delayunit by a fourth delay value having a delay time given by subtractingthe third delay value from the second delay value; and an inverter forinverting a phase of the output of the second delay unit to output aninitialization signal for initializing the shift registers.
 15. Thesemiconductor memory device as recited in claim 14, wherein the firstand second D flip-flops are initialized by the initialization signal.16. The semiconductor memory device as recited in claim 14, furthercomprising a synchronization signal generator for generating asynchronization signal for controlling a synchronization of the aligningunit in response to the output of the first delay unit.
 17. Thesemiconductor memory device as recited in claim 16, wherein thesynchronization signal generator includes: a third delay unit fordelaying the output of the first delay unit by a fifth delay valuehaving a delay time obtained by subtracting the third delay value fromthe first delay value; and a logic gate for performing an AND operationof an output of the third delay unit and the output of the first delayunit.
 18. A semiconductor memory device having a plurality oftransmission/reception pads, a plurality of ports performing serial datacommunication with an external device through the transmission/receptionpads, a plurality of banks performing a parallel data communication withthe ports, and a plurality of global data buses providing datacommunication between the banks and the ports, the semiconductor memorydevice comprising: a signal aligning circuit for sequentially storingand aligning bits of first signals from the reception pads 1 bit by 1bit in a test mode of the bank, the bit number of which corresponding tothe number of pads, generating second signals the bit number of which isn times the number of the reception pads (where n is an integer equal toor greater than 2), and outputting the second signals to the banksthrough the global data buses, wherein the first signals are addresssignals of the memory cell array.
 19. The semiconductor memory device asrecited in claim 18, wherein the signal aligning circuit includes: firstand second storage units for receiving the first signals andsequentially storing bits, the number of which corresponds to the numberof the pads; and an aligning unit for aligning the first signalstransferred from the first and second storage units and generating thesecond signals.
 20. The semiconductor memory device as recited in claim19, wherein the first and second storage units store the first signalsin synchronization with an internal clock.
 21. The semiconductor memorydevice as recited in claim 19, wherein the first storage unit stores thefirst signals in synchronization with a first clock signal of theinternal clock.
 22. The semiconductor memory device as recited in claim21, wherein the first storage unit stores the first signals insynchronization with a rising edge of the first clock signal of theinternal clock.
 23. The semiconductor memory device as recited in claim21, wherein the second storage unit stores the first signals transferredfrom the first storage unit in synchronization with a second clocksignal of the internal clock.
 24. The semiconductor memory device asrecited in claim 23, wherein the second storage unit stores the firstsignals transferred from the first storage unit in synchronization witha rising edge of the second clock signal of the internal clock.
 25. Thesemiconductor memory device as recited in claim 23, wherein the firstand second storage units include shift registers.
 26. The semiconductormemory device as recited in claim 25, wherein the shift registerincludes D flip-flops the number of which corresponds to the number ofthe pads.
 27. The semiconductor memory device as recited in claim 26,wherein the D flip-flop transfers the first signals 1 bit by 1 bit insynchronization with the internal clock.
 28. The semiconductor memorydevice as recited in claim 25, wherein the aligning unit receives thefirst signals transferred from the first and second storage units, andoutputs the second signals by delaying the received signal by a firstdelay value from the rising edge of the second clock of the internalclock.
 29. The semiconductor memory device as recited in claim 28,wherein the aligning unit includes a plurality of transfer gates. 30.The semiconductor memory device as recited in claim 28, furthercomprising an initialization signal generator for initializing the shiftregisters after delaying as much as a second delay value greater thanthe first delay value from the rising edge of the second clock of theinternal clock.
 31. The semiconductor memory device as recited in claim30, wherein the initialization signal generator includes: a first Dflip-flop for transferring a power supply voltage in synchronizationwith the rising edge of the first clock signal of the internal clock; asecond D flip-flop for transferring an output of the first D flip-flopin synchronization with the rising edge of the second clock signal ofthe internal clock; a first delay unit for delaying an output of thesecond D flip-flop by a third delay value less than the first delayvalue; a second delay unit for delaying an output of the first delayunit by a fourth delay value having a delay time obtained by subtractingthe third delay value from the second delay value; and an inverter forinverting a phase of the output of the second delay unit to output aninitialization signal for initializing the shift registers.
 32. Thesemiconductor memory device as recited in claim 31, wherein the firstand second D flip-flops are initialized by the initialization signal.33. The semiconductor memory device as recited in claim 31, furthercomprising a synchronization signal generator for generating asynchronization signal for controlling a synchronization of the aligningunit in response to the output of the first delay unit.
 34. Thesemiconductor memory device as recited in claim 33, wherein thesynchronization signal generator includes: a third delay unit fordelaying the output of the first delay unit by a fifth delay valuehaving a delay time given by subtracting the third delay value from thefirst delay value; and a logic gate for performing an AND operation ofan output of the third delay unit and the output of the first delayunit.
 35. A semiconductor memory device having a memory cell array andperforming a test operation by using external address signals inputthrough a plurality of pads during a test mode, the semiconductor memorydevice comprising: a signal aligning circuit for sequentially receivingand storing bits of the external address signals the number of whichcorresponds to the number of pads, generating and aligning internaladdress signals the number of which is n times the number of the pads(where n is an integer equal to or greater than 2), and outputtingaligned internal address signals to the memory cell array.
 36. Thesemiconductor memory device as recited in claim 35, wherein the signalaligning circuit includes: first and second storage units for receivingand sequentially storing the external address signals, and outputtingthe internal address signals; and an aligning unit for aligning theinternal address signals transferred from the first and second storageunits and generating the aligned internal address signals.
 37. Thesemiconductor memory device as recited in claim 36, wherein the firstand second storage units store the external address signals and internaladdress signals in synchronization with an internal clock, respectively.38. The semiconductor memory device as recited in claim 36, wherein thefirst storage unit stores the external address signals insynchronization with a first clock signal of the internal clock.
 39. Thesemiconductor memory device as recited in claim 38, wherein the firststorage unit stores the external address signals in synchronization witha rising edge of the first clock signal of the internal clock.
 40. Thesemiconductor memory device as recited in claim 38, wherein the secondstorage unit stores the internal address signals transferred from thefirst storage unit in synchronization with a second clock signal of theinternal clock.
 41. The semiconductor memory device as recited in claim40, wherein the second storage unit stores the internal address signalstransferred from the first storage unit in synchronization with a risingedge of the second clock signal of the internal clock.
 42. Thesemiconductor memory device as recited in claim 40, wherein the firstand second storage units include shift registers.
 43. The semiconductormemory device as recited in claim 42, wherein the shift registers eachinclude a plurality of D flip-flops the number of which corresponds tothe number of the pads.
 44. The semiconductor memory device as recitedin claim 42, wherein the aligning unit receives the internal addresssignals transferred from the first and second storage units, and alignsand outputs the internal address signals by delaying the receivedsignals by a first delay value from the rising edge of the second clocksignal of the internal clock.
 45. The semiconductor memory device asrecited in claim 44, wherein the aligning unit includes a plurality oftransfer gates.
 46. The semiconductor memory device as recited in claim44, further comprising an initialization signal generator forinitializing the shift registers after delaying for a second delay valuegreater than the first delay value from the rising edge of the secondclock signal of the internal clock.